2sd2599

2sd2599

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

2SD2599

HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
datasheet transistor 2sd2599

l High Voltage

: VCBO = 1500 V

l Low Saturation Voltage : VCE (sat) = 8 V (Max.)

l High Speed

: tf = 0.5 µs (Typ.)

l Bult-in Damper Type

l Collector Metal (Fin) is Fully Covered with Mold Resin.

MAXIMUM RATINGS (Tc = 25°C)
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2sd2599

2sd2599

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

2SD2599

HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
datasheet transistor 2sd2599

l High Voltage

: VCBO = 1500 V

l Low Saturation Voltage : VCE (sat) = 8 V (Max.)

l High Speed

: tf = 0.5 µs (Typ.)

l Bult-in Damper Type

l Collector Metal (Fin) is Fully Covered with Mold Resin.

MAXIMUM RATINGS (Tc = 25°C)
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bc547 datasheet

bc547 datasheet

NPN general purpose transistors

Philips Semiconductors

FEATURES


• Low current (max. 100 mA)

• Low voltage (max. 65 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package.

PNP complements: BC556 and BC557

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bc547 datasheet

bc547 datasheet

NPN general purpose transistors

Philips Semiconductors

FEATURES


• Low current (max. 100 mA)

• Low voltage (max. 65 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package.

PNP complements: BC556 and BC557

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2n5551 datasheet

2n5551 datasheet

NPN General Purpose Amplifier

This device is designed for general purpose high voltage amplifiers


and gas discharge display driving. Sourced from Process 16
 
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
 
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2n5551 datasheet

2n5551 datasheet

NPN General Purpose Amplifier

This device is designed for general purpose high voltage amplifiers


and gas discharge display driving. Sourced from Process 16
 
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
 
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irf630 datasheet

irf630 datasheet

IRF630 IRF630FP

TYPICAL RDS(on) = 0.35 Ω

EXTREMELY HIGH dV/dt CAPABILITY

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION


This power MOSFET is designed using he


company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.


APPLICATIONS

HIGH CURRENT SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

 
download  irf630 datasheet

 

 

 
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IRF630-circuits
 
 

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irf630 datasheet

irf630 datasheet

IRF630 IRF630FP

TYPICAL RDS(on) = 0.35 Ω

EXTREMELY HIGH dV/dt CAPABILITY

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION


This power MOSFET is designed using he


company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.


APPLICATIONS

HIGH CURRENT SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

 
download  irf630 datasheet

 

 

 
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IRF630-circuits
 
 

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irf3205 datasheet

IRF3205

HEXFET® Power MOSFET
 

Description



Advanced HEXFET® Power MOSFETs from International



Rectifier utilize advanced processing techniques to achieve


extremely low on-resistance per silicon area. This


benefit, combined with the fast switching speed and


ruggedized device design that HEXFET power MOSFETs


are well known for, provides the designer with an extremely


efficient and reliable device for use in a wide variety of


applications.


The TO-220 package is universally preferred for all


commercial-industrial applications at power dissipation


levels to approximately 50 watts. The low thermal


resistance and low package cost of the TO-220 contribute


to its wide acceptance throughout the industry.


l Advanced Process Technology


l Ultra Low On-Resistance


l Dynamic dv/dt Rating


l 175°C Operating Temperature


l Fast Switching


l Fully Avalanche Rated


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irf3205 datasheet

IRF3205

HEXFET® Power MOSFET
 

Description



Advanced HEXFET® Power MOSFETs from International



Rectifier utilize advanced processing techniques to achieve


extremely low on-resistance per silicon area. This


benefit, combined with the fast switching speed and


ruggedized device design that HEXFET power MOSFETs


are well known for, provides the designer with an extremely


efficient and reliable device for use in a wide variety of


applications.


The TO-220 package is universally preferred for all


commercial-industrial applications at power dissipation


levels to approximately 50 watts. The low thermal


resistance and low package cost of the TO-220 contribute


to its wide acceptance throughout the industry.


l Advanced Process Technology


l Ultra Low On-Resistance


l Dynamic dv/dt Rating


l 175°C Operating Temperature


l Fast Switching


l Fully Avalanche Rated


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buz11 datasheet

buz11 datasheet

30A, 50V, 0.040 Ohm, N-Channel Power



MOSFET

This is an N-Channel enhancement mode silicon gate power


field effect transistor designed for applications such as


switching regulators, switching converters, motor drivers,


relay drivers and drivers for high power bipolar switching


transistors requiring high speed and low gate drive power.


This type can be operated directly from integrated circuits.


Formerly developmental type TA9771.
 
 
Features



• 30A, 50V


• rDS(ON) = 0.040Ω


• SOA is Power Dissipation Limited


• Nanosecond Switching Speeds


• Linear Transfer Characteristics


• High Input Impedance


• Majority Carrier Device


• Related Literature


- TB334 “Guidelines for Soldering Surface Mount


Components to PC Boards”
 
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buz11 datasheet

buz11 datasheet

30A, 50V, 0.040 Ohm, N-Channel Power



MOSFET

This is an N-Channel enhancement mode silicon gate power


field effect transistor designed for applications such as


switching regulators, switching converters, motor drivers,


relay drivers and drivers for high power bipolar switching


transistors requiring high speed and low gate drive power.


This type can be operated directly from integrated circuits.


Formerly developmental type TA9771.
 
 
Features



• 30A, 50V


• rDS(ON) = 0.040Ω


• SOA is Power Dissipation Limited


• Nanosecond Switching Speeds


• Linear Transfer Characteristics


• High Input Impedance


• Majority Carrier Device


• Related Literature


- TB334 “Guidelines for Soldering Surface Mount


Components to PC Boards”
 
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irf840 datasheet

irf840 datasheet

8A, 500V, 0.850 Ohm, N-Channel Power



MOSFET


This N-Channel enhancement mode silicon gate power field


effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of


energy in the breakdown avalanche mode of operation. All of


these power MOSFETs are designed for applications such


as switching regulators, switching converters, motor drivers,


relay drivers, and drivers for high power bipolar switching


transistors requiring high speed and low gate drive power.


These types can be operated directly from integrated


circuits.


Formerly developmental type TA17425.
 
 
Features



• 8A, 500V


• rDS(ON) = 0.850Ω


• Single Pulse Avalanche Energy Rated


• SOA is Power Dissipation Limited


• Nanosecond Switching Speeds


• Linear Transfer Characteristics


• High Input Impedance


• Related Literature


- TB334 “Guidelines for Soldering Surface Mount


Components to PC Boards”
 
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irf840 datasheet

irf840 datasheet

8A, 500V, 0.850 Ohm, N-Channel Power



MOSFET


This N-Channel enhancement mode silicon gate power field


effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of


energy in the breakdown avalanche mode of operation. All of


these power MOSFETs are designed for applications such


as switching regulators, switching converters, motor drivers,


relay drivers, and drivers for high power bipolar switching


transistors requiring high speed and low gate drive power.


These types can be operated directly from integrated


circuits.


Formerly developmental type TA17425.
 
 
Features



• 8A, 500V


• rDS(ON) = 0.850Ω


• Single Pulse Avalanche Energy Rated


• SOA is Power Dissipation Limited


• Nanosecond Switching Speeds


• Linear Transfer Characteristics


• High Input Impedance


• Related Literature


- TB334 “Guidelines for Soldering Surface Mount


Components to PC Boards”
 
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irfp460 datasheet

irfp460 datasheet

IRFP460

N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247


PowerMESH™ MOSFET



TYPICAL RDS(on) = 0.22 Ω



EXTREMELY HIGH dv/dt CAPABILITY



100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED


DESCRIPTION


This power MOSFET is designed using the


company’s consolidated strip layout-based MESH


OVERLAY™ process. This technology matches


and improves the performances compared with


standard parts from various sources.


APPLICATIONS :



HIGH CURRENT SWITCHING


UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,


INDUSTRIAL, AND LIGHTING EQUIPMENT
 
 
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irfp460 datasheet

irfp460 datasheet

IRFP460

N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247


PowerMESH™ MOSFET



TYPICAL RDS(on) = 0.22 Ω



EXTREMELY HIGH dv/dt CAPABILITY



100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED


DESCRIPTION


This power MOSFET is designed using the


company’s consolidated strip layout-based MESH


OVERLAY™ process. This technology matches


and improves the performances compared with


standard parts from various sources.


APPLICATIONS :



HIGH CURRENT SWITCHING


UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,


INDUSTRIAL, AND LIGHTING EQUIPMENT
 
 
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irf9540 datasheet

irf9540 datasheet

IRF9540, RF1S9540SM

19A, 100V, 0.200 Ohm, P-Channel Power


MOSFETs

These are P-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. They can be operated directly from

integrated circuits.

Formerly Developmental Type TA17521.
 
 
 
Features


• 19A, 100V

• rDS(ON) = 0.200Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”
 
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irf9540 datasheet

irf9540 datasheet

IRF9540, RF1S9540SM

19A, 100V, 0.200 Ohm, P-Channel Power


MOSFETs

These are P-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. They can be operated directly from

integrated circuits.

Formerly Developmental Type TA17521.
 
 
 
Features


• 19A, 100V

• rDS(ON) = 0.200Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”
 
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irf9530 datasheet

irf9530 datasheet

12A, 100V, 0.300 Ohm, P-Channel Power


MOSFETs

These are P-Channel enhancement mode silicon gate power

field effect transistors. They are advanced power MOSFETs

designed, tested, and guaranteed to withstand a specified

level of energy in the breakdown avalanche mode of

operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. The high input impedance allows these

types to be operated directly from integrated circuits.

Formerly developmental type TA17511.
 
 
Features


• 12A, 100V

• rDS(ON) = 0.300Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”
 
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irf9530 datasheet

irf9530 datasheet

12A, 100V, 0.300 Ohm, P-Channel Power


MOSFETs

These are P-Channel enhancement mode silicon gate power

field effect transistors. They are advanced power MOSFETs

designed, tested, and guaranteed to withstand a specified

level of energy in the breakdown avalanche mode of

operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. The high input impedance allows these

types to be operated directly from integrated circuits.

Formerly developmental type TA17511.
 
 
Features


• 12A, 100V

• rDS(ON) = 0.300Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”
 
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